| PART |
Description |
Maker |
| CAT28F002 CAT28F002PI-90BT CAT28F002NI-90BT CAT28F |
90ns 2M-bit CMOS boot block flash memory
150ns 2M-bit CMOS boot block flash memory
120ns 2M-bit CMOS boot block flash memory
2 Megabit CMOS Boot Block Flash Memory
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http://
CATALYST[Catalyst Semiconductor]
|
| PALCE20V8-10DMB PALCE20V8-10JC PALCE20V8-10JI PALC |
BBG ECL TRNSLATR DIFF; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
Flash Erasable, Reprogrammable CMOS PAL Device FLASH PLD, 15 ns, QCC28
Flash Erasable, Reprogrammable CMOS PAL Device FLASH PLD, 10 ns, PDIP24
Flash Erasable, Reprogrammable CMOS PAL Device FLASH PLD, 15 ns, CDIP24
Flash Erasable, Reprogrammable CMOS PAL Device FLASH PLD, 25 ns, CDIP24
S-Video Cable Assembly; Connector Type A:Mini-DIN 4 Male; Connector Type B:Mini-DIN 4 Male; Cable Length:50ft; Color:Black; No. of Contacts:4
FlashErasable/ReprogrammableCMOSPALDevice
Flash Erasable/ Reprogrammable CMOS PAL Device
|
Cypress Semiconductor, Corp.
CypressSemiconductor
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CAT28F102 CAT28F102T14I-45T CAT28F102PI-45T CAT28F |
90ns 1M-bit CMOS flash memory
70ns 1M-bit CMOS flash memory
55ns 1M-bit CMOS flash memory
45ns 1M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
|
Catalyst Semiconductor
http://
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| MX29F004BQC-70 MX29F004BQC-12 MX29F004BQC-90 MX29F |
x8 Flash EEPROM
4M-BIT [512KX8] CMOS FLASH MEMORY 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| ST62E30BF1 ST6230BM1/XXX ST62P30BM3/XXX ST62P30BM6 |
MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|DIP|28PIN|CERAMIC
MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|SOP|28PIN|PLASTIC
IC, 60FBGA, 512MBIT DDR DRAM 60 PIN BGA 32MBX16
MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|DIP|28PIN|PLASTIC
IC, MEM, SDRAM DDR166, 32 MEG X 16, 16 BIT, 6NS, 2.5V, FBGA60 单片机| 8位| ST6200的CPU |的CMOS |专科| 28脚|塑料
|
Black Box, Corp.
|
| IS28F020-120PL IS28F020-120PLI IS28F020-120T IS28F |
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
CAP 33UF 6V 20% TANT SMD-3216-18 TR-7
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R |
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AM29LV800BT-80DTC2 AM29LV800BT-80DGI2 AM29LV800BT- |
25NS,OTP CERDIP,883C; LEV B FULLY CMPLNT(EPLD)
20NS, OTP, PLCC, COM TEMP(EPLD)
20NS, SOIC, IND TEMP(EPLD)
25NS, SOIC, COM TEMP(EPLD)
20NS,OTP LCC,883C; LEVEL B FULLY CMPLNT(EPLD)
10MHZ, 8 DIP, COM TEMP(FPGA)
10MHZ, 20 PLCC, IND TEMP(FPGA)
10MHZ, 32 TQFP, COM TEMP(FPGA)
10MHZ, 44 PLCC, COM TEMP(FPGA)
30MHZ, 3.3V, 20 PLCC, COM TEMP(FPGA)
8 TSSOP,PB/HALO FREE,IND,1.8V(SERIAL EE)
DIE SALE, 1.8V, 11 MIL(SERIAL EE)
8 PDIP,PB/HALO FREE,IND TEMP,1.8V(SERIAL EE)
65K CONFIG MEM, 20 PLCC, IND TEMP(FPGA)
10MHZ, 20 SOIC, IND TEMP(FPGA)
128K CONFIG MEM, 20 PLCC, COM(FPGA)
EEPROM EEPROM
10MHZ, 8 NSOIC, COM TEMP(FPGA) EEPROM
512K X 16 FLASH 3V PROM, 120 ns, UUC44
10MHZ, 8 LAP, 5K MOQ(FPGA)
10MHZ, 8 N-SOIC, COM TEMP(FPGA)
10MHZ, 20 PLCC, COM TEMP(FPGA)
512K X 16 FLASH 3V PROM, 80 ns, UUC44
|
ADVANCED MICRO DEVICES INC
|
| AT45DB081B AT45DB081B-TC-2.5 AT45DB081B-RC-2.5 AT4 |
8-megabit 2.5-volt Only or 2.7-volt Only DataFlash
SERIAL EEPROM|FLASH|4KX264X8|CMOS|BGA|14PIN|PLASTIC
SERIAL EEPROM|FLASH|4KX264X8|CMOS|SOP|28PIN|PLASTIC 1081344 X 8 FLASH 2.7V PROM, PDSO28
SERIAL EEPROM|FLASH|4KX264X8|CMOS|TSSOP|28PIN|PLASTIC 1081344 X 8 FLASH 2.7V PROM, PDSO28
|
Atmel Corp.
Atmel, Corp.
|
| TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
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